Dependence of the mobility limit upon the Fermi level position in direct gap III-V group semiconductorsKOURKOUTAS, C. D; EUTHYMIOU, P. C; PAPAIOANNOU, G. J et al.Solid state communications. 1990, Vol 74, Num 9, pp 999-1001, issn 0038-1098, 3 p.Article

A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; SYMEONIDES, Chrys I et al.Microelectronics journal. 2008, Vol 39, Num 5, pp 737-739, issn 0959-8324, 3 p.Article

Effect of α-particle irradiation on AlGaAs/GaAs planar photoconductive detectors at low temperaturesZARDAS, G. E; EUTHYMIOU, P. C; SYMEONIDES, C et al.Physica status solidi. A. Applied research. 1992, Vol 133, Num 1, pp K49-K52, issn 0031-8965Article

On the electron-irradiation induced defects in GaP:ZnPAPAIOANNOU, G. J; EUTHYMIOU, P. C; CARABATOS, C et al.Physica status solidi. A. Applied research. 1986, Vol 98, Num 2, pp K125-K127, issn 0031-8965Article

Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiationZARDAS, G. E; YANNAKOPOULOS, P. H; ZISKA, M et al.Microelectronics journal. 2005, Vol 36, Num 1, pp 1-4, issn 0959-8324, 4 p.Article

On the impurity photoconductivity of semi-insulating GaP:CrPAPAIOANNOU, G. J; ANAGNOSTAKIS, E; EUTHYMIOU, P. C et al.Physica status solidi. A. Applied research. 1989, Vol 114, Num 2, pp K215-K218, issn 0031-8965Article

Transport parameters in illuminated layers of semiinsulating GaAsEUTHYMIOU, P. C; PAPAIOANNOU, G. J; KOURKOUTAS, C. D et al.Solid state communications. 1987, Vol 62, Num 6, pp 423-425, issn 0038-1098Article

Photovoltaic effects of GaAs MESFET layersPAPAIOANNOU, G. J; KALIAKATSOS, J. A; EUTHYMIOU, P. C et al.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 3, pp 167-169, issn 0143-7100Article

Temperature dependence of Si-GaAs energy gap using photoconductivity spectraZARDAS, G. E; YANNAKOPOULOS, P. H; ZISKA, M et al.Microelectronics journal. 2006, Vol 37, Num 2, pp 91-93, issn 0959-8324, 3 p.Article

Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperaturesEUTHYMIOU, P. C; ZARDAS, G. E; SYMEONIDIS, C et al.Physica status solidi. A. Applied research. 1993, Vol 139, Num 2, pp K113-K116, issn 0031-8965Article

The effect of electron irradiation dose on the profile of electric characteristics of Gaas VPE layersKOURKOUTAS, C. D; KOVACS, B; EUTHYMIOU, P. C et al.Physica status solidi. A. Applied research. 1993, Vol 135, Num 1, pp K21-K24, issn 0031-8965Article

Electron-damage studies in GaP at low temperatureEUTHYMIOU, P. C; PAPAIOANNOU, G. J; KALIAKATSOS, J. A et al.Solid state communications. 1986, Vol 58, Num 3, pp 193-195, issn 0038-1098Article

Electron irradiation induced defects in undoped and Te doped gallium phosphideZARDAS, G. E; SYMEONIDES, Ch. I; EUTHYMIOU, P. C et al.Solid state communications. 2008, Vol 145, Num 7-8, pp 332-336, issn 0038-1098, 5 p.Article

Room temperature persistent photoconductivity in GaP:SZARDAS, G. E; THEODOROU, D. E; EUTHYMIOU, P. C et al.Solid state communications. 1998, Vol 105, Num 2, pp 77-79, issn 0038-1098Article

A study of the profile of the E3 electron trap in GaAsKOURKOUTAS, C. D; KOVACS, B; EUTHYMIOU, P. C et al.Solid state communications. 1994, Vol 89, Num 1, pp 45-49, issn 0038-1098Article

DLTS studies of defects in GaP : Te before and after electron irradiationBANBURY, P. C; EUTHYMIOU, P. C; KOURKOUTAS, C. D et al.Solid state communications. 1990, Vol 74, Num 4, pp 305-308, issn 0038-1098, 4 p.Article

Anomalous magnetoresistance effects in Te doped GaSbKOURKOUTAS, C. D; BEKRIS, P. D; PAPAIOANNOU, G. J et al.Solid state communications. 1985, Vol 55, Num 10, pp 881-885, issn 0038-1098Article

Transport parameters of n-type GaSbKOURKOUTAS, C. D; BEKRIS, P. D; PAPAIOANNOU, G. J et al.Solid state communications. 1984, Vol 49, Num 11, pp 1071-1075, issn 0038-1098Article